Nitride Wide Bandgap Semiconductor Material and Electronic Devices / Edition 1

by Yue Hao, Jin Feng Zhang, Jin Cheng Zhang

Overview

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Product Details

ISBN-13:	9781498745123
Publisher:	Taylor & Francis
Publication date:	10/03/2016
Pages:	392
Product dimensions:	7.00(w) x 10.00(h) x (d)

About the Author

Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.

Table of Contents

Nitride Wide Bandgap Semiconductor Material and Electronic Devices