Materials Fundamentals Of Molecular Beam Epitaxy / Edition 1

by Jeffrey Y. Tsao

Overview

The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE.


* Provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy
* Thorough enough to benefit molecular beam epitaxy researchers
* Broad enough to benefit materials, surface, and device researchers
* Referenes articles at the forefront of modern research as well as those of historical interest

Product Details

ISBN-13:	9780127016252
Publisher:	Elsevier Science
Publication date:	10/01/1992
Pages:	324
Product dimensions:	6.00(w) x 8.90(h) x 1.00(d)

Table of Contents

Preface. List of Figures. List of Tables. Bulk Phase Equilibra. Free Energies and Open Systems. Elemental Phases. Alloy Phases. Thin Film Structure and Microstructure. Ordering and Clustering. Coherency and Semi-coherency. Surface Morphology and Composition. Surface Composition. Index.

Editorial Reviews

A comprehensive summary of the principles of molecular-beam epitaxy, the process by which most of the crystals are grown for advanced device structures in solid-state physics, electronics, and optoelectronics. At a level accessible to graduate students and researchers, progresses from the basic materials science and solid-state physics concepts, to the topics of ongoing research. Annotation c. Book News, Inc., Portland, OR (booknews.com)

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