Hot-Carrier Effects in MOS Devices

by Eiji Takeda, Akemi Miura-Hamada, Cary Y. Yang

Overview

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.

This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.

Product Details

ISBN-13:	9780126822403
Publisher:	Elsevier Science
Publication date:	11/20/1995
Pages:	312
Product dimensions:	6.00(w) x 9.00(h) x (d)

Table of Contents

MOS Device Fundamentals
Hot-Carrier Injection Mechanisms
Hot-Carrier Device Degradation
AC and Process-Induced Hot-Carrier Effects
Hot-Carrier Effects at Low Temperature and Low Voltage
Dependence of Hot-Carrier Phenomena on Device Structure
As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices
Gate-to-Drain Overlatpped Devices (GOLD)

Editorial Reviews

A compilation of recently published results and analyses relating to hot carriers in metal-oxide-silicon (MOS) devices, for practicing device engineers and researchers in academia and industry. Assumes some knowledge of electrostatics and modern physics, but not of MOS devices, the physics of which are reviewed to a level equivalent to a first-year graduate course on semiconductor devices. Over 100 pages are devoted to the bibliography. Updated and expanded from Takeda's treatment in Japanese, published by Nikkei in 1987. Annotation c. Book News, Inc., Portland, OR (booknews.com)

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