Handbook of Silicon Semiconductor Metrology / Edition 1

by Alain C. Diebold

Overview

Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs,
this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay, acoustic film thickness, dopant dose, junction depth, and electrical measurements; particle and defect detection; and flatness following chemical mechanical polishing. Providing examples of well-developed metrology capability, the book focuses on metrology for lithography, transistor, capacitor, and on-chip interconnect process technologies.

Product Details

ISBN-13:	9780367397166
Publisher:	CRC Press
Publication date:	10/17/2019
Pages:	896
Product dimensions:	7.00(w) x 10.00(h) x (d)

Table of Contents

Introduction - silicon semiconductor metrology. Part 1 Transistor fabrication metrology: gate dielectric metrology; metrology for ion implantation; MOS device characterization; carrier illumination characterization of ultra-shallow implants;modelling of statistical manufacturing sensitivity and of process control and metrology requirements for a 0.18Mum NMOSFET. Part 2 On-chip interconnect metrology: overview of metrology for on-chip interconnect; metrology for on-chip interconnectdielectrics; thin film metrology using impulsive stimulated thermal scattering (ISTS); metal interconnect process control using picosecond ultrasonics; sheet resistance measurements of interconnect films; characterization of low dielectric constantmaterials; high resolution profilometry for CMP and etch metrology. Part 3 Lithography metrology: critical dimension metrology in the scanning electron microscope; scanned probe microscope dimensional metrology; electrical DC metrology and relatedreference materials; metrology of image placement; scatterometry for semiconductor metrology. Part 4 Defect detection and characterization: unpatterned wafer defect detection; particle and defect characterization; calibration of particle detectionsystems. Part 5 Sensor based metrology: in-situ metrology. Part 6 Data management: metrology data management and information systems. Part 7 Electrical measurement based statistical metrology: statistical metrology. Part 8 Overviews of key measurement andcalibration technology: physics of optical metrology of silicon based semiconductor devices; UV, VUV and extreme UV spectroscopic reflectometry and ellipsometry; analysis of thin layer structures by x-ray reflectometry; ion beam methods; electronmicroscopy based measurement of feature thickness and calibration of reference materials; status of lithography at the end of 2000.

Editorial Reviews

...recommended for special libraries and academic libraries serving graduate level programs in these areas.

E-Streams

A reference for people in both the metrology and processing communities who are engaged in research, development, or manufacturing. When possible the scientists and engineers writing the chapters have described the underlying science of measurement as well as its application to current materials and processes. They cover transistor fabrication metrology, on-chip interconnect metrology, lithography metrology, detecting and characterizing defects, sensor- based metrology, data management, electrical measurement-based statistical metrology, and key measurement and calibration technology. Annotation c. Book News, Inc., Portland, OR (booknews.com)

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