Electrothermal Analysis of VLSI Systems / Edition 1

by Yi-Kan Cheng, Ching-Han Tsai, Chin-Chi Teng, Sung-Mo (Steve) Kang

Overview

Electrothermal Analysis of VLSI Systems addresses electrothermal problems in modern VLSI systems.
Part I, The Building Blocks, discusses electrothermal phenomena and the fundamental building blocks that electrothermal simulation requires (including power analysis, temperature-dependent device modeling, thermal/electrothermal simulation, and experimental setup-calibration).
Part II, The Applications, discusses three important applications of VLSI electrothermal analysis including temperature-dependent electromigration diagnosis, cell-level thermal placement and temperature-driven power and timing analysis.
Electrothermal Analysis of VLSI Systems will be useful for researchers in the fields of IC reliability analysis and physical design, as well as VLSI designers and graduate students.

Product Details

ISBN-13:	9780792378617
Publisher:	Springer US
Publication date:	06/30/2000
Edition description:	2002
Pages:	210
Product dimensions:	6.10(w) x 9.25(h) x 0.02(d)

Table of Contents

The Building Blocks.- Power Analysis for CMOS Circuits.- Temperature-dependent MOS Device Modeling.- Thermal Simulation for VLSI Systems.- Fast-timing Electrothermal Simulation.- The Applications.- Temperature-dependent Electromigration Reliability.- Temperature-driven Cell Placement.- Temperature-driven Power and Timing Analysis.

Editorial Reviews

From the Foreword:

‘Continuing increases in the levels of circuit integration and concomitant increases in performance are sustaining the trend of increasing power dissipation in VLSI systems. A consequence is that the impact of temperature on the successful operation and reliability of devices must be comprehended during the design process.....This text provides a comprehensive formulation of the electrothermal analysis problem beginning with a summary of the sources of power dissipation in CMOS circuits and followed by a formulation of the effect of temperature on MOS devices.'
Dr. Ralph K. Cavin, Vice President, Semiconductor Research Corporation

From the Publisher