Compound Semiconductors Strained Layers and Devices / Edition 1

by Suresh Jain, Magnus Willander, R. Van Overstraeten

Overview

In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possi ble to describe all this work in a monograph of this size, Compound Se miconductors Strained Layers and Devices provides an overview with suf ficient detail to cover all the essential aspects of recent developmen ts in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi s trained layers are discussed for comparison to clarify the underlying physics.

Product Details

ISBN-13:	9780792377696
Publisher:	Springer US
Publication date:	03/31/2000
Series:	Electronic Materials Series , #7
Edition description:	2000
Pages:	337
Product dimensions:	6.10(w) x 9.25(h) x 0.03(d)

Table of Contents

1 Introduction.- 1.1 Evolution of strained layers.- 1.2 Conventional III-V-based heterostructures.- 1.3 III-Nitrides.- 1.4 Wide bandgap II-VI semiconductors.- 1.5 Material parameters.- 1.6 Scope and organization of this book.- 2 Characterization and growth.- 2.1 Methods of characterization.- 2.2 Epitaxial growth methods.- 2.3 Growth of conventional III-V semiconductors.- 2.4 Growth of II-VI semiconductors.- 2.5 Growth of Ill-nitride epilayers.- 3 Strain and critical thickness.- 3.1 Strain and energies of epilayers.- 3.2 Processes involved in dislocation generation.- 3.3 Critical thickness.- 4 Strain relaxation and defects.- 4.1 Strain in GeSi layers.- 4.2 Strain in III-V semiconductor layers.- 4.3 Strain in II-VI layers.- 4.4 Strain and defects in Ill-Nitride layers.- 5 Band structure and optical properties.- 5.1 Band structure.- 5.2 Band offsets.- 5.3 Optical properties of III-V semiconductors.- 5.4 Optical properties of II-VI semiconductors.- 5.5 Optical properties of Ill-Nitrides.- 6 Electrical and magnetic properties.- 6.1 Electrical properties of II-VI semiconductors.- 6.2 Electrical properties of n-type GaN.- 6.3 Electrical properties of p-type Ill-Nitrides.- 6.4 Electrical properties A1N, InN and alloys.- 6.5 Schottky barriers and ohmic contacts.- 6.6 Effect of applied electric field.- 6.7 Piezoelectric effect.- 6.8 Effect of magnetic field on semiconductors.- 7 Strained layer optoelectronic devices.- 7.1 Conventional-Ill-V semiconductor lasers.- 7.2 ZnSe-based light emitters and other devices.- 7.3 Other II-VI semiconductor applications.- 7.4 Ill-Nitride Light Emitting Diodes.- 7.5 GaN based Lasers.- 8 Transistors.- 8.1 InGaAs transistors.- 8.2 II-VI semiconductor transistors.- 8.3 Ill-Nitride based transistors.- 8.4 Device Processing.- 9 Summary and conclusions.- 9.1 Growth, defects and strain.- 9.2 Band structure and electronic properties.- 9.3 Applications and future work.- Appendix A.