Microwave and RF Semiconductor Control Device Modeling

by Robert H. Caverly

Overview

This comprehensive resource presents the modeling and simulation of microwave semiconductor control devices and circuits. Fundamental PIN, MOSFET, and MESFET nonlinear device modeling are discussed, including the analysis of transient and harmonic behavior. Readers find clear examples that provide guidance on how to use specific modeling techniques for their challenging projects in the field. Numerous illustrations help practitioners better understand important device and circuit behavior, revealing the relationship between key parameters and results. This authoritative volume covers basic and complex mathematical models for the most common semiconductor control elements used in today's microwave and RF circuits and systems.

Product Details

ISBN-13:	9781630810214
Publisher:	Artech House, Incorporated
Publication date:	01/31/2016
Pages:	342
Product dimensions:	7.20(w) x 10.20(h) x 0.90(d)

Table of Contents

Preface xi

Acknowledgments xiii

Chapter 1 Introduction 1

1.1 Historical Perspective and Background 1

1.1.1 Simplified Switch Concepts 2

1.2 General Control Circuit Terminology and Operation 3

1.2.1 Switching Quality Factor (Q) 3

1.2.2 Circuit Analysis 6

1.2.3 Control Circuit Power Handling 8

1.2.4 Definition of Control Circuit Terms 10

1.3 Circuits 11

1.3.1 Reflective Switches and Attenuators 11

1.3.2 Matched Attenuators 17

1.3.3 Phase Shifters 20

1.4 Noise 28

1.4.1 Resistive Noise Model 28

1.4.2 Noise Figure Model 30

1.4.3 Cascade System Noise 32

1.5 Control Elements 33

1.5.1 PIN Diode Control Elements 33

1.5.2 FET-Based Control Elements 34

1.6 Additional Information 35

References 36

Chapter 2 Nonideal Device Behavior in Control Circuits 39

2.1 Control Device Parasitics 39

2.1.1 Device Packages 40

2.1.2 Interconnections (On-Chip) 47

2.2 Modeling Thermal Behavior 51

2.2.1 Thermal Resistance 51

2.2.2 Thermal Time Constant 54

2.3 Device Nonlinearity 55

2.3.1 Origin of Nonlinearity 56

2.3.2 Order of Nonlinearity 57

References 62

Chapter 3 Modeling PIN diodes-Linear Behavior 65

3.1 Introduction 65

3.2 PIN Diode Modeling-Simple 65

3.2.1 Simple Lumped Element Modeling 65

3.2.2 Forward Bias Operation 69

3.2.3 Reverse Bias Operation 71

3.3 PIN Diode Equivalent Circuit Models 74

3.3.1 Lumped Element Model 75

3.3.2 Current and Voltage-Dependent Models 75

3.4 Integral-Based PIN Diode Model-Forward Bias 77

3.4.1 Linear Modeling-One Dimensional 79

3.4.2 Recombination in the Heavily Doped Regions 82

3.4.3 I-Region Charge Density 83

3.4.4 Linear Modeling-Multidimensional 86

3.5 PIN Diode Impedance as a Function of Frequency 88

3.5.1 PIN Diode Impedance Versus Frequency: Mathematical Analysis 88

3.5.2 Carrier Lifetime Measurement 92

3.5.3 Effects of Temperature on PIN Diode Impedance 93

3.6 PIN Diode Reverse Bias Modeling 95

References 98

Chapter 4 Modeling PIN Diodes-Nonlinear and Time Domain Behavior 101

4.1 Introduction 101

4.2 PIN Diode Forward Bias Distortion 101

4.2.1 Detailed Mathematical Modeling 101

4.2.2 PIN Diode Distortion at High Frequencies 104

4.3 PIN Diode Reverse Bias Distortion 112

4.4 Minimum Reverse Bias in High-Power Applications 115

4.5 Time Domain Models 119

4.5.1 SPICE Model-Isothermal 119

4.5.2 SPICE Model-Electrothermal 125

4.5.3 Comments on SPICE Simulations 129

References 129

Chapter 5 Modeling MOSFET Control Devices 131

5.1 Introduction 131

5.2 Review of CMOS Technology 131

5.2.1 The CMOS Physical Structure 131

5.2.2 Technology Scaling 133

5.3 Current-Voltage (I-V) Characteristics of the nMOSFET RF Control Device 134

5.3.1 I-V Characteristics 136

5.3.2 RF On-State Resistance 136

5.3.3 Bulk Resistance 138

5.3.4 RF Off-State Resistance 139

5.4 Detailed Capacitance Characteristics 139

5.4.1 Intrinsic Device Capacitance Origin 139

5.4.2 Multiple Gate Fingers 141

5.4.3 RF Equivalent Circuit 142

5.4.4 RF Bulk Node Effects 142

5.4.5 Silicon on Insulator (SOI) 144

5.4.6 Packaging Parasitics 145

5.5 Detailed MOS Control Device Characteristics 146

5.5.1 High Field Effects in MOSFET Control Devices 146

5.5.2 Gate Resistance 146

5.5.3 Nonlinear Operation in the On-State 148

5.5.4 Nonlinear Operation in the Off-State 150

5.5.5 MOS Stacking 151

5.5.6 Thermal Modeling 151

5.6 SPICE/BSIM Models: SPICE Levels 1 through 3 and BSIM models 152

5.6.1 SPICE Level 3 152

5.6.2 BSIM Parameters 153

5.6.3 SPICE Simulation Example 154

References 156

Chapter 6 Modeling MESFET and HEMT Control Devices 159

6.1 Introduction 159

6.2 Review of Bulk MESFET Technology 160

6.2.1 Current-voltage (I-V) Characteristics of the Bulk MESFET Rf Control Device 161

6.2.2 RF On-State Resistance 165

6.2.3 RF Off-State Resistance 167

6.3 MESFET Capacitance Characteristics 168

6.3.1 Intrinsic Device Capacitance Origin 168

6.3.2 RF Equivalent Circuit 169

6.3.3 Packaging Considerations 171

6.3.4 Gate Resistance, R_G 171

6.3.5 Equivalent Circuit Simulation 172

6.4 HEMT Technologies 173

6.4.1 HEMT On-State Resistance 176

6.4.2 HEMT Capacitance Characteristics 176

6.5 Detailed MESFET/HEMT Control Device Characteristics 177

6.5.1 Nonlinear Operation in the On-State MESFET/HEMT 177

6.5.2 Nonlinear Operation in the Off-State 180

6.6 SPICE Modeling 182

6.6.1 SPICE MESFET (Statz) Model 182

6.6.2 SPICE Simulation Example 184

References 185

Chapter 7 Switch and Switched Circuit Applications 189

7.1 Transmit/Receive (TR) Switches 189

7.1.1 Introduction 190

7.1.2 Basic Switching Structures 191

7.2 Specific TR Switches 192

7.2.1 Two-Device SPDT TR Switch 192

7.2.2 Four-Device SPDT TR Switch with Improved Isolation 209

7.2.3 Tuned λ/4 Transmission Line SPDT TR Switches 215

7.2.4 Linear Balanced Duplexer-Based Switch for Magnetic Resonance Imaging (MRI) 218

7.3 Switched Passive Element for Tuning and Matching 222

7.3.1 Capacitor and Inductor Bank Switching 223

References 225

Chapter 8 Control and Attenuator Applications 227

8.1 Introduction 227

8.2 Attenuators 227

8.2.1 Reflective Attenuator 228

8.2.2 Π-Connected Matched Attenuator 237

8.3 Microwave and RF Limiters 246

8.3.1 PIN Diode Limiter Pair 249

8.3.2 MOSFET Limiter 250

8.4 Phase Shifters 250

References 254

Author Biography 257

Index 259