Gallium Nitride and Related Materials II: Volume 468

by C. R. Abernathy, H. Amano, J. C. Zolper

Overview

This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.

Product Details

ISBN-13:	9781558993723
Publisher:	Materials Research Society
Publication date:	08/13/1997
Series:	MRS Proceedings , #468
Pages:	526
Product dimensions:	6.40(w) x 9.30(h) x 1.30(d)

Editorial Reviews

Pushing the envelope in III-nitride science and technology, these papers (representing approximately 70% of those presented at the symposia) focus on recent developments in materials science finding applications in short-wavelength lasers and high-power electronics. Noteworthy are developments in GaN, InN, AIN, and their alloys, related primarily to advances in materials preparation and understanding of defect issues, and secondarily, to material and device processing. Controversy was generated by a report of enhanced conductivity in p-type material through co-doping of oxygen and Mg. Papers are organized into sections on: growth and doping, substrates and their effects, characterization, processing, device performance and design. Annotation c. by Book News, Inc., Portland, Or.

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